Edge passivation of shingled poly-Si/SiO<i>_x</i> passivated contacts solar cells

This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiO x passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlO ) layers elaborated thermal Atomic Layer Deposition (ALD) to passivate edges shingled cells cut using innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlO annealing led very low cut-related performance losses. Indeed, and FF surpassed values obtained for as-cut shingles 0.5% abs 2.6% , respectively. Approaches further improvements are also discussed, particularly overcome short-circuit current density decrease observed shingles.